NGTB50N65S1WG
onsemi
onsemi
IGBT TRENCH 650V 140A TO247
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NGTB50N65S1WG
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Product details
The NGTB50N65S1WG by onsemi is a cutting-edge single IGBT transistor designed for high-power applications. This discrete semiconductor product excels in environments where efficiency and durability are paramount. Featuring excellent thermal conductivity and low switching losses, the NGTB50N65S1WG is ideal for use in electric vehicle charging stations, welding equipment, and industrial automation systems. Its robust construction ensures reliable operation even under extreme temperatures and voltage fluctuations. Engineers will appreciate its straightforward installation and compatibility with various drive circuits. Upgrade your power management systems with the NGTB50N65S1WG and experience unmatched performance. Contact us today for more details and pricing options.
General specs
- Product Status: Obsolete
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 140 A
- Current - Collector Pulsed (Icm): 140 A
- Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A
- Power - Max: 300 W
- Switching Energy: 1.25mJ (on), 530µJ (off)
- Input Type: Standard
- Gate Charge: 128 nC
- Td (on/off) @ 25°C: 75ns/128ns
- Test Condition: 400V, 50A, 10Ohm, 15V
- Reverse Recovery Time (trr): 70 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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