NGTD30T120F2SWK
onsemi
onsemi
IGBT TRENCH FIELD STOP 1200V DIE
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Reference Price (USD)
79+
$4.70873
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NGTD30T120F2SWK
$0.00
Product details
Enhance your power control systems with the NGTD30T120F2SWK single IGBT transistor from onsemi. This high-performance component is tailored for applications demanding efficient energy conversion and minimal heat generation. The NGTD30T120F2SWK is widely used in wind turbine inverters, HVAC systems, and medical power supplies, thanks to its exceptional reliability and fast response times. Its advanced architecture ensures low conduction losses and high switching frequencies, making it a top choice for modern power electronics. Whether you're upgrading existing systems or designing new ones, the NGTD30T120F2SWK offers the flexibility and performance you need. Submit your inquiry online to learn more about this versatile IGBT transistor.
General specs
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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