Shopping cart

Subtotal: $0.00

NJVMJD41CT4G

onsemi
NJVMJD41CT4G Preview
onsemi
TRANS NPN 100V 6A DPAK
$0.42
Available to order
Reference Price (USD)
1+
$0.41715
500+
$0.4129785
1000+
$0.408807
1500+
$0.4046355
2000+
$0.400464
2500+
$0.3962925
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

onsemi NJVMJD41CT4G is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
NJVMJD41CT4G

NJVMJD41CT4G

$0.42

Product details

Discover the NJVMJD41CT4G, a high-efficiency Bipolar Junction Transistor from onsemi designed for precision electronic applications. As part of the Discrete Semiconductor Products range, this single BJT transistor offers excellent linearity and switching performance. The device features optimized electron mobility for enhanced signal fidelity in amplification circuits. Its symmetrical structure allows for flexible configuration in various circuit topologies. The NJVMJD41CT4G demonstrates remarkable stability across temperature variations, ensuring consistent operation. Common implementations include voltage regulators, oscillator circuits, and impedance matching networks. Industrial automation, audio equipment, and power supply designs frequently incorporate this reliable transistor. The component's durable packaging protects against mechanical stress and environmental factors. With its straightforward integration and proven reliability, the NJVMJD41CT4G simplifies circuit design challenges. onsemi's commitment to quality means you receive a product that meets rigorous industry standards. Interested in testing this BJT in your application? Request a quote through our online portal for prompt assistance from our sales team.

General specs

  • Product Status: Active
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 6 A
  • Voltage - Collector Emitter Breakdown (Max): 100 V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
  • Current - Collector Cutoff (Max): 50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 4V
  • Power - Max: 1.75 W
  • Frequency - Transition: 3MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK

Viewed products

Taiwan Semiconductor Corporation

BC817-25W RFG

$0.00 (not set)
NTE Electronics, Inc

BDV65

$0.00 (not set)
Diodes Incorporated

DXTN58100CFDB-7

$0.00 (not set)
Diodes Incorporated

DXT2011P5-13

$0.00 (not set)
Microchip Technology

2N5581

$0.00 (not set)
onsemi

NJW1302G

$0.00 (not set)
Rohm Semiconductor

2SD2142KT146

$0.00 (not set)
NTE Electronics, Inc

NTE398

$0.00 (not set)
Diodes Incorporated

FZT753TA

$0.00 (not set)
NXP Semiconductors

BC54PAS115

$0.00 (not set)
Top