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NSV1C201MZ4T1G

onsemi
NSV1C201MZ4T1G Preview
onsemi
TRANS NPN 100V 2A SOT223
$0.67
Available to order
Reference Price (USD)
1,000+
$0.25918
2,000+
$0.23632
5,000+
$0.22107
10,000+
$0.20582
25,000+
$0.20328
Exquisite packaging
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onsemi NSV1C201MZ4T1G is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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NSV1C201MZ4T1G

NSV1C201MZ4T1G

$0.67

Product details

Upgrade your electronic designs with the NSV1C201MZ4T1G, a high-reliability Bipolar Junction Transistor from onsemi. This single BJT in the Discrete Semiconductor Products range offers exceptional linear amplification characteristics for precision analog circuits. The device features low harmonic distortion and excellent phase response, making it ideal for audio and instrumentation applications. Its robust construction withstands electrical stress and thermal cycling without performance degradation. The NSV1C201MZ4T1G demonstrates consistent current gain across its operating range, simplifying circuit stabilization. Common uses include microphone preamplifiers, medical monitoring equipment, and precision voltage references. Broadcast systems, laboratory instruments, and high-end audio components benefit from this transistor's clean signal reproduction. onsemi subjects each NSV1C201MZ4T1G unit to comprehensive electrical testing before shipment. The transistor's lead frame design optimizes thermal dissipation in high-duty-cycle applications. With its combination of technical excellence and manufacturing quality, the NSV1C201MZ4T1G delivers outstanding value. Contact our sales team through the website inquiry form to discuss your specific requirements and procurement options.

General specs

  • Product Status: Active
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2 A
  • Voltage - Collector Emitter Breakdown (Max): 100 V
  • Vce Saturation (Max) @ Ib, Ic: 180mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
  • Power - Max: 800 mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223 (TO-261)

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