NTEFS2MS31NTDG
onsemi
onsemi
NTEFS2MS31 - NCH 12V 2.3A WLCSP
$0.09
Available to order
Reference Price (USD)
1+
$0.09360
500+
$0.092664
1000+
$0.091728
1500+
$0.090792
2000+
$0.089856
2500+
$0.08892
Exquisite packaging
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NTEFS2MS31NTDG
$0.09
Product details
Discover the NTEFS2MS31NTDG, a high-efficiency Bipolar Junction Transistor from onsemi designed for precision electronic applications. As part of the Discrete Semiconductor Products range, this single BJT transistor offers excellent linearity and switching performance. The device features optimized electron mobility for enhanced signal fidelity in amplification circuits. Its symmetrical structure allows for flexible configuration in various circuit topologies. The NTEFS2MS31NTDG demonstrates remarkable stability across temperature variations, ensuring consistent operation. Common implementations include voltage regulators, oscillator circuits, and impedance matching networks. Industrial automation, audio equipment, and power supply designs frequently incorporate this reliable transistor. The component's durable packaging protects against mechanical stress and environmental factors. With its straightforward integration and proven reliability, the NTEFS2MS31NTDG simplifies circuit design challenges. onsemi's commitment to quality means you receive a product that meets rigorous industry standards. Interested in testing this BJT in your application? Request a quote through our online portal for prompt assistance from our sales team.
General specs
- Product Status: Obsolete
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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