Shopping cart

Subtotal: $0.00

NTMS4807NR2G

onsemi
NTMS4807NR2G Preview
onsemi
MOSFET N-CH 30V 9.1A 8SOIC
$1.20
Available to order
Reference Price (USD)
2,500+
$0.50081
5,000+
$0.47577
12,500+
$0.45788
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

onsemi NTMS4807NR2G is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
NTMS4807NR2G

NTMS4807NR2G

$1.20

Product details

Enhance your electronic designs with the NTMS4807NR2G single MOSFET transistor from onsemi, a premium Discrete Semiconductor Product in the Transistors - FETs, MOSFETs - Single classification. This power-efficient component excels in switching applications, delivering robust performance with minimal energy loss. The NTMS4807NR2G features an optimized gate drive characteristic that ensures smooth operation across various voltage ranges. Its compact design doesn't compromise on power handling capabilities, making it suitable for space-constrained applications. Notable advantages include superior noise immunity, stable operation under varying load conditions, and enhanced electrostatic discharge protection. These qualities make the NTMS4807NR2G particularly valuable for medical equipment, telecommunications infrastructure, and aerospace electronics. Implement this MOSFET in your next project involving DC-DC converters, load switches, or power distribution systems. The component's reliability and efficiency will significantly improve your system's overall performance. For engineers seeking quality MOSFET solutions, the NTMS4807NR2G represents an excellent choice. Visit our website to request a quote or submit your inquiry directly through our online portal for prompt assistance.

General specs

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 6.1mOhm @ 14.8A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 24 V
  • FET Feature: -
  • Power Dissipation (Max): 860mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOIC
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)

Viewed products

STMicroelectronics

STL140N4F7AG

$0.00 (not set)
onsemi

NDS352AP

$0.00 (not set)
Renesas Electronics America Inc

RJK5020DPK01-E

$0.00 (not set)
Diodes Incorporated

DMP25H18DLFDE-13

$0.00 (not set)
Microchip Technology

MSC060SMA070B4

$0.00 (not set)
onsemi

NDD03N40ZT4G

$0.00 (not set)
onsemi

NTTFS4H05NTWG

$0.00 (not set)
Nexperia USA Inc.

PMZB950UPELYL

$0.00 (not set)
Alpha & Omega Semiconductor Inc.

AONR36366

$0.00 (not set)
Diodes Incorporated

ZXMN3A01ZTA

$0.00 (not set)
Top