SGP10N60RUFDTU
onsemi
onsemi
IGBT 600V 16A TO220-3
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Reference Price (USD)
1+
$2.11000
10+
$1.90600
100+
$1.54320
500+
$1.27852
1,000+
$1.06957
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SGP10N60RUFDTU
$0.00
Product details
Maximize power efficiency with the SGP10N60RUFDTU single IGBT transistor by onsemi. This high-quality component is engineered for applications requiring robust switching and thermal stability, such as renewable energy systems, industrial welding machines, and electric vehicle powertrains. The SGP10N60RUFDTU features low switching losses and high current capacity, ensuring reliable performance in demanding conditions. Its compact design and ease of integration make it a favorite among power electronics designers. Whether you're working on large-scale industrial projects or compact consumer electronics, the SGP10N60RUFDTU delivers the performance you need. Get started today by submitting an online inquiry for pricing and availability.
General specs
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 16 A
- Current - Collector Pulsed (Icm): 30 A
- Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 10A
- Power - Max: 75 W
- Switching Energy: 141µJ (on), 215µJ (off)
- Input Type: Standard
- Gate Charge: 30 nC
- Td (on/off) @ 25°C: 15ns/36ns
- Test Condition: 300V, 10A, 20Ohm, 15V
- Reverse Recovery Time (trr): 60 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
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