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SMMBFJ309LT1G

onsemi
SMMBFJ309LT1G Preview
onsemi
JFET N-CH 25V 30MA SOT23
$0.45
Available to order
Reference Price (USD)
3,000+
$0.20460
6,000+
$0.19140
15,000+
$0.17820
30,000+
$0.16896
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SMMBFJ309LT1G

SMMBFJ309LT1G

$0.45

Product details

Optimize your RF applications with the SMMBFJ309LT1G RF MOSFET transistor from onsemi, a leader in discrete semiconductor products. This high-frequency transistor is designed for superior amplification and signal fidelity. Its advanced FET technology ensures minimal noise and maximum efficiency. The SMMBFJ309LT1G handles high power levels with excellent thermal stability. With high gain and linearity, it is perfect for demanding RF circuits. The transistor's robust design guarantees durability in tough conditions. Its compact size enables seamless integration into diverse electronic layouts. The SMMBFJ309LT1G is ideal for systems requiring reliable and efficient RF performance. Key benefits include fast switching, low signal loss, and high impedance matching. These features make it suitable for use in 5G infrastructure, aerospace communication, and military electronics. It is also effective in consumer gadgets, automotive telematics, and industrial monitoring systems. The SMMBFJ309LT1G ensures consistent operation across various frequencies. onsemi has engineered this MOSFET to exceed industry expectations. For cutting-edge RF technology, the SMMBFJ309LT1G is an excellent selection. Improve your designs with this high-quality transistor. Request a quote or submit an inquiry online now. Depend on the SMMBFJ309LT1G from onsemi for superior RF solutions.

General specs

  • Product Status: Active
  • Transistor Type: N-Channel JFET
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating (Amps): 30mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 25 V
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)

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