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MMDT3946_S1_00001

Panjit International Inc.
MMDT3946_S1_00001 Preview
Panjit International Inc.
COMPLEMENTARY NPN/PNP GENERAL PU
$0.33
Available to order
Reference Price (USD)
1+
$0.33000
500+
$0.3267
1000+
$0.3234
1500+
$0.3201
2000+
$0.3168
2500+
$0.3135
Exquisite packaging
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Panjit International Inc. MMDT3946_S1_00001 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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MMDT3946_S1_00001

MMDT3946_S1_00001

$0.33

Product details

Discover the engineering excellence of Panjit International Inc.'s MMDT3946_S1_00001, a premier Bipolar Junction Transistor (BJT) Array in the Discrete Semiconductor Products category. This advanced component integrates multiple transistors with matched characteristics for precision circuit applications. The MMDT3946_S1_00001 offers outstanding current handling capacity with excellent thermal properties. Its design ensures parameter consistency across all transistors in the array. The product features low saturation voltage for enhanced energy efficiency in operation. With its high-frequency response, it suits demanding switching applications. The MMDT3946_S1_00001 maintains stable performance across wide temperature ranges. Its compact form factor supports space-constrained design requirements. Audio amplification systems benefit from its low distortion characteristics. Power supply circuits utilize its reliable switching performance. Sensor interface electronics employ its precise current amplification. The MMDT3946_S1_00001 also serves critical functions in automotive control modules. Panjit International Inc. has applied rigorous testing procedures to guarantee product reliability. The component's construction allows for effective thermal management in operation. Its design complies with international standards for quality and safety. Engineers value its consistent performance in both prototype and production environments. The MMDT3946_S1_00001 represents a versatile solution for diverse electronic applications. To learn more about this high-performance BJT Array, submit your inquiry through our website today.

General specs

  • Product Status: Active
  • Transistor Type: NPN, PNP Complementary
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA, 400mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
  • Power - Max: 225mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363

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