ISL6613AECBZ-T
Renesas Electronics America Inc
Renesas Electronics America Inc
IC GATE DRVR HALF-BRIDGE 8SOIC
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ISL6613AECBZ-T
$0.00
Product details
Engineered for excellence, the ISL6613AECBZ-T PMIC - Gate Driver from Renesas Electronics America Inc represents the next generation of power management technology. This sophisticated IC provides intelligent gate driving capabilities for MOSFETs and IGBTs, ensuring optimal switching performance in power conversion systems. The ISL6613AECBZ-T features a compact design that doesn't compromise on functionality, offering designers a perfect balance between size and performance. Its innovative architecture minimizes switching losses while maintaining precise control over power devices. The gate driver incorporates advanced synchronization techniques that enhance system reliability under varying load conditions. With its industry-leading noise immunity, the ISL6613AECBZ-T maintains stable operation even in electrically noisy environments. This makes it particularly valuable for electric vehicle charging stations, where consistent performance is critical. The component also finds ideal applications in solar power conditioning systems and uninterruptible power supplies (UPS). For industrial robotics, the ISL6613AECBZ-T enables precise motor control with minimal energy waste. The gate driver's thermal management capabilities ensure long-term reliability in high-temperature operations. Additional benefits include configurable drive strength and programmable turn-on/off times, allowing for fine-tuned performance optimization. The ISL6613AECBZ-T also features comprehensive fault detection and reporting functions for enhanced system safety. These attributes make it a preferred choice for medical imaging equipment and aerospace power systems. Discover how this gate driver can elevate your power management solution - visit our website to request a quote or technical support for your project needs.
General specs
- Product Status: Obsolete
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 10.8V ~ 13.2V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 1.25A, 2A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 36 V
- Rise / Fall Time (Typ): 26ns, 18ns
- Operating Temperature: 0°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: 8-SOIC-EP
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