NE3509M04-T2-A
Renesas Electronics America Inc
Renesas Electronics America Inc
SMALL SIGNAL N-CHANNEL MOSFET
$0.83
Available to order
Reference Price (USD)
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$0.83000
500+
$0.8217
1000+
$0.8134
1500+
$0.8051
2000+
$0.7968
2500+
$0.7885
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NE3509M04-T2-A
$0.83
Product details
The NE3509M04-T2-A by Renesas Electronics America Inc is a high-performance RF MOSFET transistor for discrete semiconductor products. This transistor is tailored for RF amplification, offering outstanding signal clarity and efficiency. Its advanced FET technology provides low noise and high gain, essential for sensitive applications. The NE3509M04-T2-A excels in power handling and thermal management, ensuring long-term reliability. With superior linearity and switching speed, it is ideal for high-frequency designs. The compact and sturdy construction allows for easy circuit integration. It is designed to perform consistently in both commercial and industrial settings. Key features include minimal distortion, fast response times, and excellent impedance matching. These qualities make the NE3509M04-T2-A perfect for wireless communication devices, satellite systems, and defense electronics. It is also well-suited for medical instrumentation, automotive radar, and industrial sensors. The NE3509M04-T2-A delivers precise and stable signal processing across all applications. Renesas Electronics America Inc has produced this MOSFET to meet the highest standards. For reliable RF performance, the NE3509M04-T2-A is a premier choice. Advance your electronic projects with this top-tier transistor. Contact us for more information or submit an online inquiry today. Select the NE3509M04-T2-A from Renesas Electronics America Inc for unmatched RF quality.
General specs
- Product Status: Obsolete
- Transistor Type: HFET
- Frequency: 2GHz
- Gain: 17.5dB
- Voltage - Test: 2 V
- Current Rating (Amps): 60mA
- Noise Figure: 0.4dB
- Current - Test: 10 mA
- Power - Output: 11dBm
- Voltage - Rated: 4 V
- Package / Case: SOT-343F
- Supplier Device Package: M04
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