NE3515S02-T1C-A
Renesas
Renesas
SUPER LOW NOISE PSEUDOMORPHIC HJ
$2.80
Available to order
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NE3515S02-T1C-A
$2.80
Product details
Upgrade your RF systems with the NE3515S02-T1C-A RF MOSFET transistor from Renesas, a key player in discrete semiconductor products. This transistor is engineered for high-frequency applications, delivering exceptional amplification and signal integrity. Its advanced FET technology ensures low noise and high efficiency, critical for precision electronics. The NE3515S02-T1C-A offers excellent power handling and thermal performance, guaranteeing reliable operation. With high gain and linearity, it is perfect for demanding RF environments. The transistor's durable and compact design facilitates easy integration into various circuits. It is built to provide consistent performance in commercial and industrial applications. Key advantages include fast switching, minimal signal loss, and superior impedance matching. These features make the NE3515S02-T1C-A ideal for telecommunications infrastructure, aerospace communication, and military systems. It is also effective in consumer electronics, automotive applications, and industrial controls. The NE3515S02-T1C-A ensures accurate and stable signal processing in all scenarios. Renesas has designed this MOSFET to meet rigorous industry standards. For high-quality RF solutions, the NE3515S02-T1C-A is a dependable option. Enhance your designs with this advanced transistor. Request a quote or submit an inquiry online to learn more. Trust the NE3515S02-T1C-A from Renesas for superior RF performance.
General specs
- Product Status: Last Time Buy
- Transistor Type: HFET
- Frequency: 12GHz
- Gain: 12.5dB
- Voltage - Test: 2 V
- Current Rating (Amps): 88mA
- Noise Figure: 0.3dB
- Current - Test: 10 mA
- Power - Output: -
- Voltage - Rated: 4 V
- Package / Case: 4-Micro-X
- Supplier Device Package: 4-Micro-X
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