RJH1CF5RDPQ-80#T2
Renesas Electronics America Inc
Renesas Electronics America Inc
IGBT 1200V 50A 192.3W TO247
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RJH1CF5RDPQ-80#T2
$0.00
Product details
The RJH1CF5RDPQ-80#T2 from Renesas Electronics America Inc is a premium single IGBT transistor designed for high-efficiency power switching. This discrete semiconductor product is perfect for applications in traction systems, uninterruptible power supplies, and industrial motor controls. With its superior thermal performance and low on-state voltage, the RJH1CF5RDPQ-80#T2 ensures optimal energy savings and extended operational life. Its rugged design withstands high current and voltage stresses, making it a reliable choice for critical power management tasks. Engineers will find its compatibility with various gate drivers a significant advantage. Discover the benefits of the RJH1CF5RDPQ-80#T2 for your next project request a quote today.
General specs
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
- Power - Max: 192.3 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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