RJH60F6BDPQ-A0#T0
Renesas Electronics America Inc
Renesas Electronics America Inc
IGBT 600V 85A 297.6W TO-247A
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$5.98000
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RJH60F6BDPQ-A0#T0
$0.00
Product details
Enhance your power control systems with the RJH60F6BDPQ-A0#T0 single IGBT transistor from Renesas Electronics America Inc. This high-performance component is tailored for applications demanding efficient energy conversion and minimal heat generation. The RJH60F6BDPQ-A0#T0 is widely used in wind turbine inverters, HVAC systems, and medical power supplies, thanks to its exceptional reliability and fast response times. Its advanced architecture ensures low conduction losses and high switching frequencies, making it a top choice for modern power electronics. Whether you're upgrading existing systems or designing new ones, the RJH60F6BDPQ-A0#T0 offers the flexibility and performance you need. Submit your inquiry online to learn more about this versatile IGBT transistor.
General specs
- Product Status: Obsolete
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 85 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 45A
- Power - Max: 297.6 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 58ns/131ns
- Test Condition: 400V, 30A, 5Ohm, 15V
- Reverse Recovery Time (trr): 25 ns
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247A
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