RJH60F6DPQ-A0#T0
Renesas Electronics America Inc
Renesas Electronics America Inc
IGBT 600V 85A 297.6W TO247A
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$6.40000
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RJH60F6DPQ-A0#T0
$0.00
Product details
The RJH60F6DPQ-A0#T0 from Renesas Electronics America Inc is a high-performance single IGBT transistor designed for efficient power management in industrial applications. This discrete semiconductor product offers robust switching capabilities and thermal stability, making it ideal for demanding environments. With its advanced design, the RJH60F6DPQ-A0#T0 ensures minimal energy loss and enhanced reliability, catering to a wide range of power electronics needs. Whether you're designing motor drives, power supplies, or renewable energy systems, this IGBT transistor delivers consistent performance under varying load conditions. Its compact form factor and ease of integration further simplify your design process. Explore the versatility of the RJH60F6DPQ-A0#T0 and elevate your power management solutions today. For pricing and availability, submit an inquiry online.
General specs
- Product Status: Obsolete
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 85 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 45A
- Power - Max: 297.6 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 58ns/131ns
- Test Condition: 400V, 30A, 5Ohm, 15V
- Reverse Recovery Time (trr): 90 ns
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247A
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