RJP4301APP-M0#T2
Renesas Electronics America Inc
Renesas Electronics America Inc
IGBT 430V TO200FL
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RJP4301APP-M0#T2
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Product details
Experience unparalleled power control with the RJP4301APP-M0#T2 single IGBT transistor by Renesas Electronics America Inc. This high-efficiency component is perfect for applications in industrial automation, renewable energy, and automotive systems. The RJP4301APP-M0#T2 boasts low energy loss and high switching frequency, making it a top choice for modern power electronics. Its robust design ensures long-term reliability even under high stress and temperature variations. Whether you're designing for high-power or compact systems, the RJP4301APP-M0#T2 offers the flexibility and performance you need. Submit your inquiry online to learn more about this advanced IGBT transistor.
General specs
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 430 V
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 10V @ 26V, 200A
- Power - Max: 30 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 50ns/100ns
- Test Condition: 300V, 200A, 30Ohm, 26V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220FL
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