RJP65T54DPM-E0#T2
Renesas Electronics America Inc
Renesas Electronics America Inc
IGBT TRENCH TO-3FP
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RJP65T54DPM-E0#T2
$0.00
Product details
The RJP65T54DPM-E0#T2 from Renesas Electronics America Inc is a state-of-the-art single IGBT transistor designed for high-power switching applications. This discrete semiconductor product is ideal for use in solar inverters, motor drives, and power distribution systems, offering exceptional efficiency and durability. With its low conduction losses and high thermal conductivity, the RJP65T54DPM-E0#T2 ensures reliable operation in extreme environments. Engineers will appreciate its fast switching speed and compatibility with various control circuits. Upgrade your power management solutions with the RJP65T54DPM-E0#T2 and achieve superior performance. For more information and to place an order, contact us today.
General specs
- Product Status: Obsolete
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 225 A
- Vce(on) (Max) @ Vge, Ic: 1.68V @ 15V, 30A
- Power - Max: 63.5 W
- Switching Energy: 330µJ (on), 760µJ (off)
- Input Type: Standard
- Gate Charge: 72 nC
- Td (on/off) @ 25°C: 35ns/120ns
- Test Condition: 400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3PFM, SC-93-3
- Supplier Device Package: TO-3PF
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