UPA2766T1A-E2-AY
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 30V 130A 8HVSON
$0.83
Available to order
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$0.82793
500+
$0.8196507
1000+
$0.8113714
1500+
$0.8030921
2000+
$0.7948128
2500+
$0.7865335
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UPA2766T1A-E2-AY
$0.83
Product details
The UPA2766T1A-E2-AY from Renesas Electronics America Inc is a high-performance single MOSFET transistor designed for efficient power management in various electronic applications. This Discrete Semiconductor Product belongs to the Transistors - FETs, MOSFETs - Single category, offering reliable switching capabilities and low power dissipation. Ideal for both industrial and consumer electronics, this component ensures optimal performance in demanding environments. With its advanced design, the UPA2766T1A-E2-AY provides enhanced thermal stability and durability, making it a preferred choice for engineers and designers. Whether you're developing power supplies, motor controls, or audio amplifiers, this MOSFET delivers consistent results. Key features include fast switching speeds, low on-resistance, and excellent thermal characteristics. These attributes contribute to improved energy efficiency and reduced heat generation in your circuits. The UPA2766T1A-E2-AY finds applications in automotive systems, renewable energy solutions, and industrial automation equipment. For power inverters, battery management systems, or LED drivers, this component offers the reliability you need. Upgrade your designs with the UPA2766T1A-E2-AY and experience superior performance. Contact us today for pricing and availability submit your inquiry online to get started!
General specs
- Product Status: Last Time Buy
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.82mOhm @ 39A, 4.5V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 257 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 10850 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta), 83W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HVSON (5x5.4)
- Package / Case: 8-PowerVDFN
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