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2SC4081U3HZGT106R

Rohm Semiconductor
2SC4081U3HZGT106R Preview
Rohm Semiconductor
TRANS NPN 50V 0.15A UMT3
$0.39
Available to order
Reference Price (USD)
3,000+
$0.05520
6,000+
$0.04800
15,000+
$0.04080
30,000+
$0.03840
75,000+
$0.03600
150,000+
$0.03360
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Rohm Semiconductor 2SC4081U3HZGT106R is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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2SC4081U3HZGT106R

2SC4081U3HZGT106R

$0.39

Product details

Upgrade your electronic designs with the 2SC4081U3HZGT106R, a high-reliability Bipolar Junction Transistor from Rohm Semiconductor. This single BJT in the Discrete Semiconductor Products range offers exceptional linear amplification characteristics for precision analog circuits. The device features low harmonic distortion and excellent phase response, making it ideal for audio and instrumentation applications. Its robust construction withstands electrical stress and thermal cycling without performance degradation. The 2SC4081U3HZGT106R demonstrates consistent current gain across its operating range, simplifying circuit stabilization. Common uses include microphone preamplifiers, medical monitoring equipment, and precision voltage references. Broadcast systems, laboratory instruments, and high-end audio components benefit from this transistor's clean signal reproduction. Rohm Semiconductor subjects each 2SC4081U3HZGT106R unit to comprehensive electrical testing before shipment. The transistor's lead frame design optimizes thermal dissipation in high-duty-cycle applications. With its combination of technical excellence and manufacturing quality, the 2SC4081U3HZGT106R delivers outstanding value. Contact our sales team through the website inquiry form to discuss your specific requirements and procurement options.

General specs

  • Product Status: Active
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 150 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
  • Power - Max: 200 mW
  • Frequency - Transition: 180MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: UMT3

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