Shopping cart

Subtotal: $0.00

R8002CND3FRATL

Rohm Semiconductor
R8002CND3FRATL Preview
Rohm Semiconductor
MOSFET N-CH 800V 2A TO252
$2.97
Available to order
Reference Price (USD)
1+
$2.97000
500+
$2.9403
1000+
$2.9106
1500+
$2.8809
2000+
$2.8512
2500+
$2.8215
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Rohm Semiconductor R8002CND3FRATL is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
R8002CND3FRATL

R8002CND3FRATL

$2.97

Product details

Rohm Semiconductor presents the R8002CND3FRATL, a high-efficiency single MOSFET transistor that excels in the Discrete Semiconductor Products category (Transistors - FETs, MOSFETs - Single). This component combines innovative semiconductor technology with practical design features to deliver superior performance in power management applications. The R8002CND3FRATL offers significant advantages including optimized switching behavior, reduced conduction losses, and enhanced thermal performance. These characteristics translate to improved system efficiency and reliability in your electronic designs. The MOSFET is particularly effective in medical imaging equipment, laboratory instrumentation, and diagnostic devices where precision power control is essential. Industrial applications benefit from its use in CNC machinery, packaging systems, and material handling equipment. For the energy sector, it's ideal for smart grid components and power monitoring systems. The R8002CND3FRATL also performs exceptionally in professional lighting systems and advanced HVAC controls. With its robust construction and electrical efficiency, this component provides design engineers with a reliable solution for diverse power switching requirements. Interested in incorporating this high-performance MOSFET into your designs? Submit your inquiry through our online platform to receive comprehensive product details, technical support, and competitive pricing information from our expert team.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 4.3Ohm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 69W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Viewed products

Diodes Incorporated

DMTH6016LFVWQ-7

$0.00 (not set)
Rohm Semiconductor

RQ3E100GNTB

$0.00 (not set)
Nexperia USA Inc.

BSS84,215

$0.00 (not set)
Nexperia USA Inc.

NX138BKHH

$0.00 (not set)
Sanyo

2SK669

$0.00 (not set)
Toshiba Semiconductor and Storage

TK8A55DA(STA4,Q,M)

$0.00 (not set)
Central Semiconductor Corp

CMUDM8005 TR PBFREE

$0.00 (not set)
STMicroelectronics

STN4NF03L

$0.00 (not set)
Vishay Siliconix

SUD50P08-25L-E3

$0.00 (not set)
IXYS

IXFX240N25X3

$0.00 (not set)
Top