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LET20030C

STMicroelectronics
LET20030C Preview
STMicroelectronics
FET RF 80V 2GHZ M243
$80.60
Available to order
Reference Price (USD)
1+
$91.52000
10+
$85.80000
Exquisite packaging
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LET20030C

LET20030C

$80.60

Product details

Maximize your RF capabilities with the LET20030C RF MOSFET transistor from STMicroelectronics, a leader in discrete semiconductor products. This high-frequency transistor is designed for exceptional amplification and signal fidelity. Its advanced FET technology ensures minimal noise and maximum efficiency. The LET20030C handles high power levels with outstanding thermal management. With high gain and linearity, it is perfect for demanding RF circuits. The transistor's durable construction guarantees reliability in harsh conditions. Its compact size allows for seamless integration into various electronic systems. The LET20030C is ideal for applications requiring stable and efficient RF performance. Key benefits include fast switching, low signal loss, and high impedance matching. These features make it suitable for use in 5G networks, satellite communication, and defense electronics. It is also effective in consumer devices, automotive systems, and industrial monitoring. The LET20030C ensures consistent operation across a wide frequency range. STMicroelectronics has engineered this MOSFET to surpass industry standards. For cutting-edge RF technology, the LET20030C is an excellent choice. Enhance your designs with this high-performance transistor. Request a quote or submit an inquiry online now. Rely on the LET20030C from STMicroelectronics for superior RF solutions.

General specs

  • Product Status: Obsolete
  • Transistor Type: LDMOS
  • Frequency: 2GHz
  • Gain: 13.9dB
  • Voltage - Test: 28 V
  • Current Rating (Amps): 9A
  • Noise Figure: -
  • Current - Test: 400 mA
  • Power - Output: 45W
  • Voltage - Rated: 80 V
  • Package / Case: M243
  • Supplier Device Package: M243

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