PD20010STR-E
STMicroelectronics
STMicroelectronics
TRANS N-CH 40V POWERSO-10RF STR
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PD20010STR-E
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Product details
The PD20010STR-E from STMicroelectronics is a premium RF MOSFET transistor in the discrete semiconductor products market. Designed for high-frequency applications, it provides superior signal amplification and clarity. This transistor features advanced FET technology for low noise and high efficiency. The PD20010STR-E excels in power handling and thermal stability, ensuring dependable performance. Its high gain and linearity make it ideal for precision RF systems. The compact and robust design allows for easy integration into various electronic layouts. It is engineered to deliver consistent results in both commercial and industrial environments. Key features include fast switching, low distortion, and excellent impedance matching. These attributes make the PD20010STR-E perfect for wireless communication, radar systems, and broadcast technology. It is also highly effective in medical devices, automotive electronics, and industrial automation. The PD20010STR-E offers reliable and accurate signal processing in all applications. STMicroelectronics has developed this MOSFET to meet the highest quality benchmarks. For top-tier RF performance, the PD20010STR-E is a trusted choice. Improve your electronic projects with this high-quality transistor. Contact us for pricing details or submit an online inquiry today. Choose the PD20010STR-E from STMicroelectronics for exceptional RF solutions.
General specs
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 2GHz
- Gain: 11dB
- Voltage - Test: 13.6 V
- Current Rating (Amps): 5A
- Noise Figure: -
- Current - Test: 150 mA
- Power - Output: 10W
- Voltage - Rated: 40 V
- Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)
- Supplier Device Package: PowerSO-10RF (Straight Lead)
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