SCTW70N120G2V
STMicroelectronics
STMicroelectronics
TRANS SJT N-CH 1200V 91A HIP247
$48.36
Available to order
Reference Price (USD)
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$48.36000
500+
$47.8764
1000+
$47.3928
1500+
$46.9092
2000+
$46.4256
2500+
$45.942
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SCTW70N120G2V
$48.36
Product details
The SCTW70N120G2V single MOSFET from STMicroelectronics represents the pinnacle of Discrete Semiconductor Products in the Transistors - FETs, MOSFETs - Single category. Engineered for precision and reliability, this component offers outstanding electrical characteristics that benefit a wide range of electronic applications. Its advanced semiconductor technology ensures minimal conduction losses and efficient heat dissipation, critical factors in power-sensitive designs. The SCTW70N120G2V features an optimized package design that enhances thermal performance while maintaining a compact footprint. Key benefits include improved switching efficiency, better load handling capacity, and enhanced protection against voltage spikes. These attributes make it indispensable for electric vehicle charging systems, uninterruptible power supplies, and industrial motor drives. In the consumer sector, it excels in high-efficiency adapters, laptop power systems, and advanced lighting solutions. The component's reliability also makes it suitable for critical infrastructure applications like data center power distribution and emergency backup systems. For design engineers seeking a MOSFET that combines performance with durability, the SCTW70N120G2V delivers on all fronts. Take the next step in your project development use our online inquiry form to request detailed specifications and purchasing information today.
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 30mOhm @ 50A, 18V
- Vgs(th) (Max) @ Id: 4.9V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 18 V
- Vgs (Max): +22V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 3540 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 547W (Tc)
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: HiP247™
- Package / Case: TO-247-3
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