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STBV45G-AP

STMicroelectronics
STBV45G-AP Preview
STMicroelectronics
TRANS NPN 400V 0.75A TO92AP
$0.51
Available to order
Reference Price (USD)
2,000+
$0.18879
Exquisite packaging
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STBV45G-AP

STBV45G-AP

$0.51

Product details

Discover the STBV45G-AP, a high-efficiency Bipolar Junction Transistor from STMicroelectronics designed for precision electronic applications. As part of the Discrete Semiconductor Products range, this single BJT transistor offers excellent linearity and switching performance. The device features optimized electron mobility for enhanced signal fidelity in amplification circuits. Its symmetrical structure allows for flexible configuration in various circuit topologies. The STBV45G-AP demonstrates remarkable stability across temperature variations, ensuring consistent operation. Common implementations include voltage regulators, oscillator circuits, and impedance matching networks. Industrial automation, audio equipment, and power supply designs frequently incorporate this reliable transistor. The component's durable packaging protects against mechanical stress and environmental factors. With its straightforward integration and proven reliability, the STBV45G-AP simplifies circuit design challenges. STMicroelectronics's commitment to quality means you receive a product that meets rigorous industry standards. Interested in testing this BJT in your application? Request a quote through our online portal for prompt assistance from our sales team.

General specs

  • Product Status: Obsolete
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 750 mA
  • Voltage - Collector Emitter Breakdown (Max): 400 V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 135mA, 400mA
  • Current - Collector Cutoff (Max): 250µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 400mA, 5V
  • Power - Max: 950 mW
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package: TO-92AP

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