STGF4M65DF2
STMicroelectronics
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT, M S
$1.29
Available to order
Reference Price (USD)
1+
$0.97000
10+
$0.87100
100+
$0.69040
500+
$0.57904
2,000+
$0.43990
6,000+
$0.42135
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STGF4M65DF2
$1.29
Product details
The STGF4M65DF2 from STMicroelectronics is a high-performance single IGBT transistor designed for efficient power switching. This discrete semiconductor product is widely used in UPS systems, induction heating, and electric vehicle applications. With its low saturation voltage and excellent thermal management, the STGF4M65DF2 ensures minimal energy loss and maximum reliability. Its compact design and easy integration make it a versatile choice for various power electronics projects. Engineers will find its high current handling and fast switching capabilities invaluable. Discover the potential of the STGF4M65DF2 for your applications request a quote today.
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 8 A
- Current - Collector Pulsed (Icm): 16 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
- Power - Max: 23 W
- Switching Energy: 40µJ (on), 136µJ (off)
- Input Type: Standard
- Gate Charge: 15.2 nC
- Td (on/off) @ 25°C: 12ns/86ns
- Test Condition: 400V, 4A, 47Ohm, 15V
- Reverse Recovery Time (trr): 133 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220FP
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