STGW60H65DFB-4
STMicroelectronics
STMicroelectronics
IGBT
$4.45
Available to order
Reference Price (USD)
600+
$5.69625
Exquisite packaging
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STGW60H65DFB-4
$4.45
Product details
Experience unparalleled power control with the STGW60H65DFB-4 single IGBT transistor by STMicroelectronics. This high-efficiency component is perfect for applications in industrial automation, renewable energy, and automotive systems. The STGW60H65DFB-4 boasts low energy loss and high switching frequency, making it a top choice for modern power electronics. Its robust design ensures long-term reliability even under high stress and temperature variations. Whether you're designing for high-power or compact systems, the STGW60H65DFB-4 offers the flexibility and performance you need. Submit your inquiry online to learn more about this advanced IGBT transistor.
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 240 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
- Power - Max: 375 W
- Switching Energy: 346µJ (on), 1.161mJ (off)
- Input Type: Standard
- Gate Charge: 306 nC
- Td (on/off) @ 25°C: 65ns/261ns
- Test Condition: 400V, 60A, 10Ohm, 15V
- Reverse Recovery Time (trr): 60 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-4
- Supplier Device Package: TO-247-4
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