STGWT15H60F
STMicroelectronics
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT H SE
$0.00
Available to order
Reference Price (USD)
1+
$2.39000
30+
$1.92500
120+
$1.73250
510+
$1.34751
1,020+
$1.11650
2,520+
$1.03950
5,010+
$1.00100
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STGWT15H60F
$0.00
Product details
Experience unparalleled power control with the STGWT15H60F single IGBT transistor by STMicroelectronics. This high-efficiency component is perfect for applications in industrial automation, renewable energy, and automotive systems. The STGWT15H60F boasts low energy loss and high switching frequency, making it a top choice for modern power electronics. Its robust design ensures long-term reliability even under high stress and temperature variations. Whether you're designing for high-power or compact systems, the STGWT15H60F offers the flexibility and performance you need. Submit your inquiry online to learn more about this advanced IGBT transistor.
General specs
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 30 A
- Current - Collector Pulsed (Icm): 60 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
- Power - Max: 115 W
- Switching Energy: 136µJ (on), 207µJ (off)
- Input Type: Standard
- Gate Charge: 81 nC
- Td (on/off) @ 25°C: 24.5ns/118ns
- Test Condition: 400V, 15A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
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