STU9HN65M2
STMicroelectronics
STMicroelectronics
MOSFET N-CH 650V 5.5A IPAK
$1.22
Available to order
Reference Price (USD)
1+
$1.35000
75+
$1.09547
150+
$0.96647
525+
$0.76381
1,050+
$0.61640
2,550+
$0.57955
5,025+
$0.55376
Exquisite packaging
Discount
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STU9HN65M2
$1.22
Product details
General specs
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 820mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251 (IPAK)
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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