TA9410E
Tagore Technology
Tagore Technology
PA RF GAN PWR 25W .03-4GHZ 50V
$70.00
Available to order
Reference Price (USD)
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$70.00000
500+
$69.3
1000+
$68.6
1500+
$67.9
2000+
$67.2
2500+
$66.5
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TA9410E
$70.00
Product details
The TA9410E by Tagore Technology is a high-performance RF MOSFET transistor for discrete semiconductor products. This transistor is tailored for RF amplification, offering outstanding signal clarity and efficiency. Its advanced FET technology provides low noise and high gain, essential for sensitive applications. The TA9410E excels in power handling and thermal management, ensuring long-term reliability. With superior linearity and switching speed, it is ideal for high-frequency designs. The compact and sturdy construction allows for easy circuit integration. It is designed to perform consistently in both commercial and industrial settings. Key features include minimal distortion, fast response times, and excellent impedance matching. These qualities make the TA9410E perfect for wireless communication devices, satellite systems, and defense electronics. It is also well-suited for medical instrumentation, automotive radar, and industrial sensors. The TA9410E delivers precise and stable signal processing across all applications. Tagore Technology has produced this MOSFET to meet the highest standards. For reliable RF performance, the TA9410E is a premier choice. Advance your electronic projects with this top-tier transistor. Contact us for more information or submit an online inquiry today. Select the TA9410E from Tagore Technology for unmatched RF quality.
General specs
- Product Status: Active
- Transistor Type: GaN HEMT
- Frequency: 20MHz ~ 3GHz
- Gain: 17dB
- Voltage - Test: -
- Current Rating (Amps): 30A
- Noise Figure: -
- Current - Test: -
- Power - Output: 25W
- Voltage - Rated: 50 V
- Package / Case: 8-VDFN Exposed Pad
- Supplier Device Package: 8-QFN (5x6)
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