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TSM60N900CH C5G

Taiwan Semiconductor Corporation
TSM60N900CH C5G Preview
Taiwan Semiconductor Corporation
MOSFET N-CH 600V 4.5A TO251
$0.63
Available to order
Reference Price (USD)
15,000+
$0.59220
Exquisite packaging
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TSM60N900CH C5G

TSM60N900CH C5G

$0.63

Product details

The TSM60N900CH C5G from Taiwan Semiconductor Corporation is a high-performance single MOSFET transistor designed for efficient power management in various electronic applications. This Discrete Semiconductor Product belongs to the Transistors - FETs, MOSFETs - Single category, offering reliable switching capabilities and low power dissipation. Ideal for both industrial and consumer electronics, this component ensures optimal performance in demanding environments. With its advanced design, the TSM60N900CH C5G provides enhanced thermal stability and durability, making it a preferred choice for engineers and designers. Whether you're developing power supplies, motor controls, or audio amplifiers, this MOSFET delivers consistent results. Key features include fast switching speeds, low on-resistance, and excellent thermal characteristics. These attributes contribute to improved energy efficiency and reduced heat generation in your circuits. The TSM60N900CH C5G finds applications in automotive systems, renewable energy solutions, and industrial automation equipment. For power inverters, battery management systems, or LED drivers, this component offers the reliability you need. Upgrade your designs with the TSM60N900CH C5G and experience superior performance. Contact us today for pricing and availability submit your inquiry online to get started!

General specs

  • Product Status: Not For New Designs
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 900mOhm @ 2.3A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 100 V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-251 (IPAK)
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

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