EMB1412MYE/NOPB
Texas Instruments
Texas Instruments
IC GATE DRVR LOW-SIDE 8MSOP
$4.45
Available to order
Reference Price (USD)
250+
$1.21000
500+
$1.05876
1,250+
$0.87725
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
Texas Instruments EMB1412MYE/NOPB is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
EMB1412MYE/NOPB
$4.45
Product details
Experience superior power management with the EMB1412MYE/NOPB PMIC - Gate Driver from Texas Instruments. This high-performance IC is engineered to deliver precise control for power semiconductor devices in various conversion topologies. The EMB1412MYE/NOPB features an advanced architecture that optimizes switching performance while minimizing energy losses. Its intelligent drive strength adjustment ensures optimal gate control under different operating conditions. The gate driver's robust design includes comprehensive protection against voltage spikes and transient conditions. In solar microinverters, the EMB1412MYE/NOPB enables efficient power conversion with maximum energy harvest. For industrial motor control, it provides reliable switching for variable frequency drives and servo systems. The component also excels in medical power supplies, where clean and stable operation is essential. The EMB1412MYE/NOPB incorporates active Miller clamp functionality that prevents unwanted turn-on in bridge configurations. Its configurable turn-on/off speeds allow designers to balance between efficiency and EMI performance. The gate driver's low quiescent current makes it suitable for always-on applications requiring energy efficiency. These features make it ideal for building automation systems and smart grid infrastructure. The EMB1412MYE/NOPB also performs exceptionally in high-power RF amplifiers and particle accelerator power supplies. Its isolated design meets stringent safety requirements for high-voltage applications. The device supports various control interfaces, including isolated and non-isolated options. With its combination of performance and reliability, the EMB1412MYE/NOPB is a versatile solution for challenging power management applications. Our technical experts are ready to assist with your design integration - visit our website to submit your inquiry and access comprehensive product resources.
General specs
- Product Status: Active
- Driven Configuration: Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: IGBT, N-Channel, P-Channel MOSFET
- Voltage - Supply: 3.5V ~ 14V
- Logic Voltage - VIL, VIH: 0.8V, 2.3V
- Current - Peak Output (Source, Sink): 3A, 7A
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 14ns, 12ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTSSOP, 8-MSOP (0.118", 3.00mm Width)
- Supplier Device Package: 8-HVSSOP
Viewed products
