1SV323,H3F
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
DIODE VARACTOR 10V ESC
$0.40
Available to order
Reference Price (USD)
4,000+
$0.08100
8,000+
$0.07650
12,000+
$0.06975
28,000+
$0.06525
100,000+
$0.06300
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1SV323,H3F
$0.40
Product details
Toshiba Semiconductor and Storage's 1SV323,H3F represents the next generation of varicap diodes in the Discrete Semiconductor Products family. This variable capacitance diode excels in applications requiring precise electronic tuning, offering superior performance compared to mechanical alternatives. Its innovative design minimizes parasitic effects while maximizing Q-factor for critical RF applications.
The diode boasts exceptional reverse voltage characteristics and consistent capacitance-voltage curve linearity. Special attention has been paid to reducing series resistance, resulting in improved overall efficiency. The component's robust construction ensures long-term reliability even in harsh operating environments.
Industry applications span:
1) Tunable filters in cellular base stations
2) Frequency synthesizers for test equipment
3) Adaptive matching networks in IoT devices
When your design demands accurate voltage-dependent capacitance, trust Toshiba Semiconductor and Storage's expertise. Visit our product page to submit a quick quote request or consult our technical support team about integrating 1SV323,H3F into your next project.
General specs
- Product Status: Active
- Capacitance @ Vr, F: 7.1pF @ 4V, 1MHz
- Capacitance Ratio: 4.3
- Capacitance Ratio Condition: C1/C4
- Voltage - Peak Reverse (Max): 10 V
- Diode Type: Single
- Q @ Vr, F: -
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-79, SOD-523
- Supplier Device Package: ESC
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