1SV325,H3F
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
DIODE VARACTOR 10V ESC
$0.41
Available to order
Reference Price (USD)
4,000+
$0.08280
8,000+
$0.07820
12,000+
$0.07130
28,000+
$0.06670
100,000+
$0.06440
Exquisite packaging
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1SV325,H3F
$0.41
Product details
Toshiba Semiconductor and Storage presents the 1SV325,H3F - a breakthrough in varactor diode technology for the Discrete Semiconductor Products market. This voltage-variable capacitor diode combines high tuning sensitivity with exceptional linearity, making it perfect for frequency-agile systems. The diode's innovative architecture ensures minimal capacitance hysteresis during rapid tuning operations.
The product stands out with its ultra-wide capacitance ratio and precision-matched characteristics for balanced configurations. Special manufacturing processes guarantee tight parameter distribution across production batches. The component's ESD protection features enhance reliability in sensitive applications.
Implementation examples:
1) Fast-tuning VCOs in spectrum analyzers
2) Parametric amplifiers in scientific instruments
3) Frequency modulators in broadcasting equipment
Discover how 1SV325,H3F can enhance your circuit designs. Contact our technical sales team via the website inquiry form for prompt assistance with your varactor diode selection and procurement needs.
General specs
- Product Status: Active
- Capacitance @ Vr, F: 12pF @ 4V, 1MHz
- Capacitance Ratio: 4.3
- Capacitance Ratio Condition: C1/C4
- Voltage - Peak Reverse (Max): 10 V
- Diode Type: Single
- Q @ Vr, F: -
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-79, SOD-523
- Supplier Device Package: ESC
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