3SK292(TE85R,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 12.5 30MA SMQ
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3,000+
$0.17825
6,000+
$0.16675
15,000+
$0.16100
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3SK292(TE85R,F)
$0.00
Product details
The 3SK292(TE85R,F) from Toshiba Semiconductor and Storage is a top-tier RF MOSFET transistor in the discrete semiconductor products category. Designed for high-frequency applications, it offers exceptional signal amplification and clarity. This transistor features advanced FET technology for low noise and high efficiency. The 3SK292(TE85R,F) excels in power handling and thermal performance, ensuring reliable operation. Its high gain and linearity make it ideal for precision RF systems. The compact and durable design allows for easy integration into various circuits. It is engineered to deliver consistent performance in both commercial and industrial environments. Key features include fast switching, low distortion, and superior impedance matching. These attributes make the 3SK292(TE85R,F) perfect for telecommunications equipment, radar systems, and broadcast technology. It is also highly effective in medical diagnostic devices, automotive safety systems, and industrial automation. The 3SK292(TE85R,F) provides reliable and accurate signal processing in all scenarios. Toshiba Semiconductor and Storage has developed this MOSFET to meet stringent quality standards. For high-performance RF solutions, the 3SK292(TE85R,F) is a trusted option. Enhance your electronic projects with this advanced transistor. Contact us for pricing details or submit an online inquiry today. Choose the 3SK292(TE85R,F) from Toshiba Semiconductor and Storage for exceptional RF performance.
General specs
- Product Status: Obsolete
- Transistor Type: N-Channel Dual Gate
- Frequency: 500MHz
- Gain: 26dB
- Voltage - Test: 6 V
- Current Rating (Amps): 30mA
- Noise Figure: 1.4dB
- Current - Test: 10 mA
- Power - Output: -
- Voltage - Rated: 12.5 V
- Package / Case: SC-61AA
- Supplier Device Package: SMQ
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