3SK294(TE85L,F)
Toshiba Semiconductor and Storage

Toshiba Semiconductor and Storage
FET RF 12.5V 500MHZ USQ
$0.48
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$0.11780
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$0.10640
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Product details
Maximize your RF capabilities with the 3SK294(TE85L,F) RF MOSFET transistor from Toshiba Semiconductor and Storage, a leader in discrete semiconductor products. This high-frequency transistor is designed for exceptional amplification and signal fidelity. Its advanced FET technology ensures minimal noise and maximum efficiency. The 3SK294(TE85L,F) handles high power levels with outstanding thermal management. With high gain and linearity, it is perfect for demanding RF circuits. The transistor's durable construction guarantees reliability in harsh conditions. Its compact size allows for seamless integration into various electronic systems. The 3SK294(TE85L,F) is ideal for applications requiring stable and efficient RF performance. Key benefits include fast switching, low signal loss, and high impedance matching. These features make it suitable for use in 5G networks, satellite communication, and defense electronics. It is also effective in consumer devices, automotive systems, and industrial monitoring. The 3SK294(TE85L,F) ensures consistent operation across a wide frequency range. Toshiba Semiconductor and Storage has engineered this MOSFET to surpass industry standards. For cutting-edge RF technology, the 3SK294(TE85L,F) is an excellent choice. Enhance your designs with this high-performance transistor. Request a quote or submit an inquiry online now. Rely on the 3SK294(TE85L,F) from Toshiba Semiconductor and Storage for superior RF solutions.
General specs
- Product Status: Active
- Transistor Type: N-Channel
- Frequency: 500MHz
- Gain: 26dB
- Voltage - Test: 6 V
- Current Rating (Amps): 30mA
- Noise Figure: 1.4dB
- Current - Test: 10 mA
- Power - Output: -
- Voltage - Rated: 12.5 V
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: USQ