DF2B6M4BSL,L3F
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
UNI-DIR ESD PR DI SOD-962 V(ESD)
$0.40
Available to order
Reference Price (USD)
1+
$0.40000
500+
$0.396
1000+
$0.392
1500+
$0.388
2000+
$0.384
2500+
$0.38
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DF2B6M4BSL,L3F
$0.40
Product details
The DF2B6M4BSL,L3F by Toshiba Semiconductor and Storage is a state-of-the-art TVS diode offering unparalleled protection against voltage spikes. This diode is engineered to deliver high-performance suppression of transient voltages, making it ideal for sensitive electronic circuits. Its innovative design ensures fast response times and high energy absorption, critical for applications in medical devices, data centers, and industrial equipment. The DF2B6M4BSL,L3F boasts low capacitance and excellent thermal stability, ensuring consistent performance under varying conditions. With its reliable clamping capability, this diode is a must-have for any high-stakes application. Elevate your circuit protection with the DF2B6M4BSL,L3F submit your inquiry now to explore purchasing options.
General specs
- Product Status: Active
- Type: Zener
- Unidirectional Channels: -
- Bidirectional Channels: 1
- Voltage - Reverse Standoff (Typ): 5.5V (Max)
- Voltage - Breakdown (Min): 5.6V
- Voltage - Clamping (Max) @ Ipp: 15V
- Current - Peak Pulse (10/1000µs): 2A (8/20µs)
- Power - Peak Pulse: 30W
- Power Line Protection: No
- Applications: HDMI, USB
- Capacitance @ Frequency: 0.12pF @ 1MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 2-SMD, No Lead
- Supplier Device Package: SL2
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