MT3S111P(TE12L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
RF TRANS NPN 6V 8GHZ PW-MINI
$0.89
Available to order
Reference Price (USD)
1,000+
$0.38250
2,000+
$0.35700
5,000+
$0.33915
10,000+
$0.32513
25,000+
$0.31620
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MT3S111P(TE12L,F)
$0.89
Product details
Toshiba Semiconductor and Storage's MT3S111P(TE12L,F) represents the next evolution in RF BJT transistors, combining cutting-edge semiconductor technology with practical design features. This discrete semiconductor product excels in high-frequency switching and amplification tasks, featuring optimized junction characteristics for superior current handling. The transistor's innovative architecture reduces parasitic capacitance while maintaining excellent power gain across its operational bandwidth. Key advantages include a wide dynamic range for variable input signals, improved thermal dissipation properties, and consistent batch-to-batch performance reliability. Designed for mission-critical applications, it performs exceptionally in 5G network infrastructure components and microwave relay systems. Broadcast engineers utilize its clean signal reproduction in FM/HD radio transmitters and television broadcasting equipment. In the transportation sector, it enables reliable communication in railway signaling and aviation navigation systems. The MT3S111P(TE12L,F) also supports emerging technologies like quantum computing research equipment and RFID tracking systems. Its lead-free construction complies with global environmental standards without sacrificing performance. For system designers seeking a balance between RF precision and power efficiency, this transistor delivers outstanding results. Toshiba Semiconductor and Storage provides comprehensive technical documentation and application notes to simplify your design process. Take the next step in your RF project complete our online inquiry form to receive personalized pricing and delivery options for the MT3S111P(TE12L,F).
General specs
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 6V
- Frequency - Transition: 8GHz
- Noise Figure (dB Typ @ f): 1.25dB @ 1GHz
- Gain: 10.5dB
- Power - Max: 1W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
- Current - Collector (Ic) (Max): 100mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: PW-MINI
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