RFM12U7X(TE12L,Q)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH PW-X
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RFM12U7X(TE12L,Q)
$0.00
Product details
Maximize your RF capabilities with the RFM12U7X(TE12L,Q) RF MOSFET transistor from Toshiba Semiconductor and Storage, a leader in discrete semiconductor products. This high-frequency transistor is designed for exceptional amplification and signal fidelity. Its advanced FET technology ensures minimal noise and maximum efficiency. The RFM12U7X(TE12L,Q) handles high power levels with outstanding thermal management. With high gain and linearity, it is perfect for demanding RF circuits. The transistor's durable construction guarantees reliability in harsh conditions. Its compact size allows for seamless integration into various electronic systems. The RFM12U7X(TE12L,Q) is ideal for applications requiring stable and efficient RF performance. Key benefits include fast switching, low signal loss, and high impedance matching. These features make it suitable for use in 5G networks, satellite communication, and defense electronics. It is also effective in consumer devices, automotive systems, and industrial monitoring. The RFM12U7X(TE12L,Q) ensures consistent operation across a wide frequency range. Toshiba Semiconductor and Storage has engineered this MOSFET to surpass industry standards. For cutting-edge RF technology, the RFM12U7X(TE12L,Q) is an excellent choice. Enhance your designs with this high-performance transistor. Request a quote or submit an inquiry online now. Rely on the RFM12U7X(TE12L,Q) from Toshiba Semiconductor and Storage for superior RF solutions.
General specs
- Product Status: Active
- Transistor Type: N-Channel
- Frequency: 520MHz
- Gain: 10.8dB
- Voltage - Test: 7.2 V
- Current Rating (Amps): 4A
- Noise Figure: -
- Current - Test: 750 mA
- Power - Output: 12W
- Voltage - Rated: 20 V
- Package / Case: TO-271AA
- Supplier Device Package: PW-X
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