RN1113(T5L,F,T)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS PREBIAS NPN 50V 0.1A SSM
$0.04
Available to order
Reference Price (USD)
3,000+
$0.04106
Exquisite packaging
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RN1113(T5L,F,T)
$0.04
Product details
The RN1113(T5L,F,T) from Toshiba Semiconductor and Storage revolutionizes compact circuit design with its pre-configured bipolar transistor solution. Integrating base-emitter resistors on-die, this BJT maintains stable biasing against supply voltage fluctuations. It shines in energy harvesting systems, wireless charging circuits, and HMI touch controllers. The device's low-profile DFN package enables thermal vias for improved heat dissipation in dense layouts. Characterized by ultra-low popcorn noise, it's ideal for sensitive measurement equipment. Automotive-qualified options are available for under-hood electronics. Reduce development cycles with this application-ready component use our live chat feature for immediate technical support on RN1113(T5L,F,T) integration.
General specs
- Product Status: Active
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 47 kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250 MHz
- Power - Max: 100 mW
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SSM
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