RN2907(T5L,F,T)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS 2PNP PREBIAS 0.2W US6
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RN2907(T5L,F,T)
$0.00
Product details
Enhance your electronic designs with the RN2907(T5L,F,T) from Toshiba Semiconductor and Storage, a premium pre-biased bipolar junction transistor (BJT) array. This product falls under the Discrete Semiconductor Products category, specifically Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The RN2907(T5L,F,T) is engineered to deliver superior performance in amplification and switching tasks, offering unmatched reliability and efficiency. Its pre-biased configuration simplifies circuit design, reducing the need for additional components. The transistor array features excellent thermal management, ensuring stable operation under varying conditions. Ideal for use in power management systems, audio amplifiers, and sensor interfaces, the RN2907(T5L,F,T) provides consistent results. Its high gain and low noise characteristics make it a preferred choice for sensitive applications. The RN2907(T5L,F,T) is also commonly used in medical devices, telecommunications equipment, and home automation systems. With its durable design and long lifespan, this BJT array is a cost-effective solution for demanding environments. To learn more about how the RN2907(T5L,F,T) can benefit your project, contact us for a detailed quote and technical support.
General specs
- Product Status: Obsolete
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
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