RN4904(T5L,F,T)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS NPN/PNP PREBIAS 0.2W US6
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
Toshiba Semiconductor and Storage RN4904(T5L,F,T) is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
RN4904(T5L,F,T)
$0.00
Product details
Upgrade your electronic projects with the RN4904(T5L,F,T) from Toshiba Semiconductor and Storage, a superior pre-biased bipolar junction transistor (BJT) array. This product belongs to the Discrete Semiconductor Products category, specifically Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The RN4904(T5L,F,T) is designed to deliver high performance in amplification and switching tasks, offering reliability and efficiency. Its pre-biased configuration reduces circuit complexity and enhances functionality. The transistor array boasts excellent thermal management, ensuring stable performance in various environments. Perfect for use in power converters, audio amplifiers, and sensor circuits, the RN4904(T5L,F,T) provides consistent and accurate results. It is also commonly utilized in automotive electronics, medical devices, and smart home systems. With its high gain and low power consumption, the RN4904(T5L,F,T) is ideal for energy-efficient applications. The robust and compact design of this BJT array makes it a versatile choice for diverse projects. To learn more about the RN4904(T5L,F,T) and how it can benefit your designs, contact us for a detailed quote and expert advice.
General specs
- Product Status: Obsolete
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 47kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
Viewed products
