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TRS8E65C,S1Q

Toshiba Semiconductor and Storage
TRS8E65C,S1Q Preview
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 650V 8A TO220-2L
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$7.48260
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TRS8E65C,S1Q

TRS8E65C,S1Q

$0.00

Product details

The TRS8E65C,S1Q single rectifier diode from Toshiba Semiconductor and Storage sets new standards for power handling and efficiency in discrete semiconductor components. This diode features an optimized balance between forward conduction characteristics and reverse blocking capability, making it ideal for various rectification applications. Its construction incorporates advanced materials for enhanced thermal performance and long service life. The TRS8E65C,S1Q is particularly suited for power supply units, voltage multipliers, and protection circuits. Industrial applications benefit from its ability to operate reliably under fluctuating load conditions. Additional advantages include excellent surge current handling and stable performance across temperature variations. This diode finds extensive use in aerospace systems, marine electronics, and heavy machinery controls. With its combination of performance and reliability, the TRS8E65C,S1Q is an excellent choice for critical electronic systems. Contact us today to learn more about this exceptional rectifier solution.

General specs

  • Product Status: Obsolete
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 8A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 90 µA @ 650 V
  • Capacitance @ Vr, F: 44pF @ 650V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2L
  • Operating Temperature - Junction: 175°C (Max)

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