BZD27C39P-HE3-18
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE ZENER 39V 800MW DO219AB
$0.15
Available to order
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10,000+
$0.14710
30,000+
$0.14058
50,000+
$0.13779
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BZD27C39P-HE3-18
$0.15
Product details
The BZD27C39P-HE3-18 from Vishay General Semiconductor - Diodes Division is a high-efficiency single Zener diode, part of the esteemed Discrete Semiconductor Products lineup. Engineered for precision and reliability, this diode is perfect for applications requiring accurate voltage regulation and protection. Its standout features include minimal power loss, fast response to voltage spikes, and excellent stability over a wide temperature range. These attributes make the BZD27C39P-HE3-18 a preferred choice for automotive control systems, industrial machinery, and renewable energy applications. It also performs exceptionally well in consumer electronics and communication devices, ensuring consistent voltage levels. Vishay General Semiconductor - Diodes Division's dedication to cutting-edge technology ensures that the BZD27C39P-HE3-18 meets the highest performance standards. Elevate your circuit designs with this superior Zener diode. Contact us today to learn more about its capabilities and request pricing information.
General specs
- Product Status: Active
- Voltage - Zener (Nom) (Vz): 39 V
- Tolerance: -
- Power - Max: 800 mW
- Impedance (Max) (Zzt): 40 Ohms
- Current - Reverse Leakage @ Vr: 1 µA @ 30 V
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
- Operating Temperature: -65°C ~ 175°C
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: DO-219AB (SMF)
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