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BZT52B9V1-E3-18

Vishay General Semiconductor - Diodes Division
BZT52B9V1-E3-18 Preview
Vishay General Semiconductor - Diodes Division
DIODE ZENER 9.1V 410MW SOD123
$0.04
Available to order
Reference Price (USD)
10,000+
$0.03910
Exquisite packaging
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BZT52B9V1-E3-18

BZT52B9V1-E3-18

$0.04

Product details

Discover the BZT52B9V1-E3-18 Zener diode by Vishay General Semiconductor - Diodes Division, a top-tier component in the Discrete Semiconductor Products category. This single Zener diode is crafted for exceptional voltage regulation, offering reliable performance in diverse electronic applications. Its advanced design features low leakage current, high surge capability, and outstanding thermal characteristics. These benefits make it ideal for use in power supplies, automotive electronics, and industrial control systems. The BZT52B9V1-E3-18 is also highly effective in protecting sensitive components from voltage transients in telecommunications and computing devices. Vishay General Semiconductor - Diodes Division's expertise in semiconductor technology ensures that this diode delivers consistent, high-quality results. Whether you're working on a new prototype or upgrading an existing system, the BZT52B9V1-E3-18 is a smart choice. Get started today by submitting an inquiry for more details and pricing options.

General specs

  • Product Status: Active
  • Voltage - Zener (Nom) (Vz): 9.1 V
  • Tolerance: ±2%
  • Power - Max: 410 mW
  • Impedance (Max) (Zzt): 4.8 Ohms
  • Current - Reverse Leakage @ Vr: 100 nA @ 7 V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123

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