SMCJ33AHE3_A/I
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
TVS DIODE 33VWM 53.3VC DO214AB
$0.35
Available to order
Reference Price (USD)
1+
$0.34980
500+
$0.346302
1000+
$0.342804
1500+
$0.339306
2000+
$0.335808
2500+
$0.33231
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SMCJ33AHE3_A/I
$0.35
Product details
Enhance your circuit protection strategy with the SMCJ33AHE3_A/I TVS diode from Vishay General Semiconductor - Diodes Division. This advanced diode is designed to mitigate the risks posed by voltage transients and surges, providing a reliable shield for your electronics. With its high surge current capacity and low clamping voltage, the SMCJ33AHE3_A/I ensures optimal performance in challenging environments. It is widely used in automotive, aerospace, and renewable energy systems. The diode's compact form factor and ease of integration make it a favorite among designers. Key advantages include superior thermal management, low leakage, and high durability. For applications requiring robust protection, the SMCJ33AHE3_A/I is an unbeatable solution. Ready to upgrade your protection? Request a quote today and experience the difference.
General specs
- Product Status: Active
- Type: Zener
- Unidirectional Channels: 1
- Bidirectional Channels: -
- Voltage - Reverse Standoff (Typ): 33V
- Voltage - Breakdown (Min): 36.7V
- Voltage - Clamping (Max) @ Ipp: 53.3V
- Current - Peak Pulse (10/1000µs): 28.1A
- Power - Peak Pulse: 1500W (1.5kW)
- Power Line Protection: No
- Applications: Automotive
- Capacitance @ Frequency: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMCJ)
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