Shopping cart

Subtotal: $0.00

IRF610LPBF

Vishay Siliconix
IRF610LPBF Preview
Vishay Siliconix
MOSFET N-CH 200V 3.3A I2PAK
$0.92
Available to order
Reference Price (USD)
1,000+
$0.94751
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Vishay Siliconix IRF610LPBF is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
IRF610LPBF

IRF610LPBF

$0.92

Product details

Enhance your electronic designs with the IRF610LPBF single MOSFET transistor from Vishay Siliconix, a premium Discrete Semiconductor Product in the Transistors - FETs, MOSFETs - Single classification. This power-efficient component excels in switching applications, delivering robust performance with minimal energy loss. The IRF610LPBF features an optimized gate drive characteristic that ensures smooth operation across various voltage ranges. Its compact design doesn't compromise on power handling capabilities, making it suitable for space-constrained applications. Notable advantages include superior noise immunity, stable operation under varying load conditions, and enhanced electrostatic discharge protection. These qualities make the IRF610LPBF particularly valuable for medical equipment, telecommunications infrastructure, and aerospace electronics. Implement this MOSFET in your next project involving DC-DC converters, load switches, or power distribution systems. The component's reliability and efficiency will significantly improve your system's overall performance. For engineers seeking quality MOSFET solutions, the IRF610LPBF represents an excellent choice. Visit our website to request a quote or submit your inquiry directly through our online portal for prompt assistance.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 36W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAK
  • Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA

Viewed products

Torex Semiconductor Ltd

XP233N0501TR-G

$0.00 (not set)
IXYS

IXFT36N50P

$0.00 (not set)
Infineon Technologies

IPW65R110CFDAFKSA1

$0.00 (not set)
Vishay Siliconix

SIUD412ED-T1-GE3

$0.00 (not set)
Infineon Technologies

AUIRFR5305

$0.00 (not set)
Texas Instruments

CSD17304Q3

$0.00 (not set)
Vishay Siliconix

SI7464DP-T1-GE3

$0.00 (not set)
IXYS

IXFR48N60P

$0.00 (not set)
Panjit International Inc.

PJD40N15_L2_00001

$0.00 (not set)
Diodes Incorporated

DMN10H220L-7

$0.00 (not set)
Top