SI4186DY-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 20V 35.8A 8SO
$1.27
Available to order
Reference Price (USD)
2,500+
$0.57400
5,000+
$0.54705
12,500+
$0.52780
Exquisite packaging
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SI4186DY-T1-GE3
$1.27
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 35.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 2.6mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3630 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 6W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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