SI5915BDC-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET 2P-CH 8V 4A 1206-8
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Vishay Siliconix SI5915BDC-T1-GE3 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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SI5915BDC-T1-GE3
$0.00
Product details
The SI5915BDC-T1-GE3 from Vishay Siliconix is a high-efficiency MOSFET array in the Discrete Semiconductor Products category, part of the Transistors - FETs, MOSFETs - Arrays subcategory. This product is designed for applications requiring high power density and reliable performance.\n\nKey features of the SI5915BDC-T1-GE3 include low on-resistance, fast switching, and superior thermal characteristics. The array format integrates multiple transistors, simplifying design and saving board space. Its robust construction ensures durability in challenging environments.\n\nIdeal uses include electric vehicle power systems, industrial controls, and consumer electronics. Electric vehicle power systems benefit from its high current handling and efficiency. Industrial controls utilize its reliability for precise operation. Consumer electronics rely on its compact design and performance.\n\nEnhance your designs with the SI5915BDC-T1-GE3. Request a quote today to explore how this MOSFET array can meet your requirements. Our team is here to provide the support you need.
General specs
- Product Status: Obsolete
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 8V
- Current - Continuous Drain (Id) @ 25°C: 4A
- Rds On (Max) @ Id, Vgs: 70mOhm @ 3.3A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 4V
- Power - Max: 3.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: 1206-8 ChipFET™
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