Shopping cart

Subtotal: $0.00

SIHD6N65E-GE3

Vishay Siliconix
SIHD6N65E-GE3 Preview
Vishay Siliconix
MOSFET N-CH 650V 7A DPAK
$1.69
Available to order
Reference Price (USD)
1+
$1.82000
10+
$1.65400
100+
$1.33900
500+
$1.05300
1,000+
$0.88140
3,000+
$0.82420
6,000+
$0.79560
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Vishay Siliconix SIHD6N65E-GE3 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
SIHD6N65E-GE3

SIHD6N65E-GE3

$1.69

Product details

Optimize your power management solutions with the SIHD6N65E-GE3 single MOSFET transistor from Vishay Siliconix, a standout in the Discrete Semiconductor Products field (Transistors - FETs, MOSFETs - Single). This high-performance component delivers exceptional electrical characteristics designed for efficiency and reliability in demanding applications. The SIHD6N65E-GE3 features advanced semiconductor technology that minimizes energy loss while maximizing power handling capabilities. Its innovative design includes enhanced protection features against common electrical stresses, ensuring long-term operational stability. The MOSFET excels in applications ranging from server power supplies and network equipment to automotive electronics and industrial control systems. For renewable energy implementations, it's particularly effective in micro-inverters and charge controllers. The component also performs exceptionally in professional audio equipment and high-end power amplifiers where clean power delivery is crucial. With its combination of robust construction and electrical efficiency, the SIHD6N65E-GE3 provides designers with a reliable solution for their power switching needs. Ready to incorporate this high-quality MOSFET into your designs? Visit our website to submit your inquiry online our sales team will provide prompt assistance with specifications, availability, and pricing information tailored to your requirements.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 100 V
  • FET Feature: -
  • Power Dissipation (Max): 78W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Viewed products

onsemi

FQPF19N10

$0.00 (not set)
onsemi

NTTFS015P03P8ZTWG

$0.00 (not set)
Micro Commercial Co

MCP60P06-BP

$0.00 (not set)
Vishay Siliconix

SIR462DP-T1-GE3

$0.00 (not set)
STMicroelectronics

STB45N60DM2AG

$0.00 (not set)
Diodes Incorporated

DMN53D0LQ-13

$0.00 (not set)
Alpha & Omega Semiconductor Inc.

AOT280A60L

$0.00 (not set)
Renesas Electronics America Inc

UPA507TE-T1-AT

$0.00 (not set)
NXP USA Inc.

PMN55LN,135

$0.00 (not set)
Alpha & Omega Semiconductor Inc.

AOT280L

$0.00 (not set)
Top