WP2806008UH
WAVEPIA.,Co.Ltd
WAVEPIA.,Co.Ltd
RF GaN HEMT 28V DC ~ 6GHZ, 8W
$54.66
Available to order
Reference Price (USD)
1+
$54.66000
500+
$54.1134
1000+
$53.5668
1500+
$53.0202
2000+
$52.4736
2500+
$51.927
Exquisite packaging
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WP2806008UH
$54.66
Product details
The WP2806008UH by WAVEPIA.,Co.Ltd is a high-performance RF MOSFET transistor for discrete semiconductor products. This transistor is tailored for RF amplification, offering outstanding signal clarity and efficiency. Its advanced FET technology provides low noise and high gain, essential for sensitive applications. The WP2806008UH excels in power handling and thermal management, ensuring long-term reliability. With superior linearity and switching speed, it is ideal for high-frequency designs. The compact and sturdy construction allows for easy circuit integration. It is designed to perform consistently in both commercial and industrial settings. Key features include minimal distortion, fast response times, and excellent impedance matching. These qualities make the WP2806008UH perfect for wireless communication devices, satellite systems, and defense electronics. It is also well-suited for medical instrumentation, automotive radar, and industrial sensors. The WP2806008UH delivers precise and stable signal processing across all applications. WAVEPIA.,Co.Ltd has produced this MOSFET to meet the highest standards. For reliable RF performance, the WP2806008UH is a premier choice. Advance your electronic projects with this top-tier transistor. Contact us for more information or submit an online inquiry today. Select the WP2806008UH from WAVEPIA.,Co.Ltd for unmatched RF quality.
General specs
- Product Status: Active
- Transistor Type: GaN HEMT
- Frequency: 6GHz
- Gain: 11dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 70 mA
- Power - Output: 6W
- Voltage - Rated: 160 V
- Package / Case: 360BH
- Supplier Device Package: 360BH
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